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Part Number | IRF7832TR |
OEMstron Part # | IRF7832TR |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 30V 20A 8-SOIC |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRF7832TR PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 26 - Jan 31 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IRF7832TR Specifications
Part Number | IRF7832TR | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 2.32V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 4.5V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4310pF @ 15V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 155°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SO | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
IRF7832TR Documents
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