For Reference Only
Part Number | IRF8308MTR1PBF |
OEMstron Part # | IRF8308MTR1PBF |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 30V 27A MX |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRF8308MTR1PBF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IRF8308MTR1PBF Specifications
Part Number | IRF8308MTR1PBF | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 150A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 2.5mOhm @ 27A, 10V | |
Vgs(th) (Max) @ Id | 2.35V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 4.5V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4404pF @ 15V | |
FET Feature | - | |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | DIRECTFET™ MX | |
Package / Case | DirectFET™ Isometric MX |
IRF8308MTR1PBF Documents
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Part Number | Description | Stock |
IRF8308MTR1PBF International Rectifier |
MOSFET N-CH 30V 27A MX |
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IRF8308MTR1PBF is |
RoHS: Compliant
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Europe - 1000 |
Part Number | Description | Stock |
IRF8308MTR1PBF D# IRF8308MTR1PBFTR-ND Infineon Technologies AG |
MOSFET N-CH 30V 27A DIRECTFET |
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IRF8308MTR1PBF. International Rectifier |
In stock shipping within 2days |
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IRF8308MTR1PBF VBsemi Electronics Co Ltd |
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33525 |
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IRF8308MTR1PBF International Rectifier |
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IRF8308MTR1PBF D# NS-IRF8308MTR1PBF International Rectifier |
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