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IRFH6200TR2PBF

IRFH6200TR2PBF
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Part Number IRFH6200TR2PBF
OEMstron Part # IRFH6200TR2PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 20V 100A 5X6 PQFN
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRFH6200TR2PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IRFH6200TR2PBF Specifications

Part Number IRFH6200TR2PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 230nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 10890pF @ 10V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerVDFN

IRFH6200TR2PBF Documents

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