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| Part Number | IRFH6200TR2PBF |
| OEMstron Part # | IRFH6200TR2PBF |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 20V 100A 5X6 PQFN |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IRFH6200TR2PBF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IRFH6200TR2PBF Specifications
| Part Number | IRFH6200TR2PBF | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 49A (Ta), 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 1.1V @ 150µA | |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 4.5V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 10890pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-PQFN (5x6) | |
| Package / Case | 8-PowerVDFN |
IRFH6200TR2PBF Documents
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