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Part Number | IRFH7110TR2PBF |
OEMstron Part # | IRFH7110TR2PBF |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N CH 100V 11A PQFN5X6 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRFH7110TR2PBF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 9 - Feb 14 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
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IRFH7110TR2PBF Specifications
Part Number | IRFH7110TR2PBF | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 58A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 13.5mOhm @ 35A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case | 8-TQFN Exposed Pad |
IRFH7110TR2PBF Documents
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