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Part Number | IRFHM8363TR2PBF |
OEMstron Part # | IRFHM8363TR2PBF |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
Description | MOSFET 2N-CH 30V 11A 8PQFN |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRFHM8363TR2PBF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IRFHM8363TR2PBF Specifications
Part Number | IRFHM8363TR2PBF | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Arrays | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
FET Type | 2 N-Channel (Dual) | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 11A | |
Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 2.35V @ 25µA | |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V | |
Power - Max | 2.7W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-PowerVDFN | |
Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
IRFHM8363TR2PBF Documents
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