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IRFHM8363TR2PBF

IRFHM8363TR2PBF
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For Reference Only

Part Number IRFHM8363TR2PBF
OEMstron Part # IRFHM8363TR2PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 11A 8PQFN
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRFHM8363TR2PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IRFHM8363TR2PBF Specifications

Part Number IRFHM8363TR2PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Infineon Technologies
Series HEXFET®
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A
Rds On (Max) @ Id, Vgs 14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1165pF @ 10V
Power - Max 2.7W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package 8-PQFN (3.3x3.3), Power33

IRFHM8363TR2PBF Documents

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