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Part Number | IRFSL4710PBF |
OEMstron Part # | IRFSL4710PBF |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 75A TO-262 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRFSL4710PBF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 22 - Jan 27 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IRFSL4710PBF Specifications
Part Number | IRFSL4710PBF | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 45A, 10V | |
Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 6160pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-262 | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
IRFSL4710PBF Documents
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Part Number | Description | Stock |
IRFSL4710PBF International Rectifier |
MOSFET N-CH 100V 75A TO-262 |
Contact Us |
Part Number | Description | Stock |
IRFSL4710PBF D# IRFSL4710PBF-ND Infineon Technologies AG |
MOSFET N-CH 100V 75A TO262 |
Limited Supply - Call |
Part Number | Description | Stock |
IRFSL4710PBF D# NS-IRFSL4710PBF International Rectifier |
OEM/CM ONLY |
1745 |
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In Stock | 482 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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