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Part Number | IRFU3711PBF |
OEMstron Part # | IRFU3711PBF |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 20V 100A I-PAK |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRFU3711PBF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IRFU3711PBF Specifications
Part Number | IRFU3711PBF | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2980pF @ 10V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 120W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | IPAK (TO-251) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
IRFU3711PBF Documents
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Part Number | Description | Stock |
IRFU3711PBF International Rectifier |
Transistor: N-MOSFET, unipolar, HEXFET, 20V, 110A, 120W |
Contact Us |
Part Number | Description | Stock |
IRFU3711PBF D# IRFU3711PBF-ND Infineon Technologies AG |
MOSFET N-CH 20V 100A IPAK |
Limited Supply - Call |
Part Number | Description | Stock |
IRFU3711PBF D# NS-IRFU3711PBF International Rectifier |
OEM/CM ONLY |
8214 |
Part Number | Description | Stock |
IRFU3711PBF International Rectifier |
shipping today |
45635 |
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