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| Part Number | IRLMS6702TR |
| OEMstron Part # | IRLMS6702TR |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 20V 2.4A 6-TSOP |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IRLMS6702TR PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 2 - Feb 7 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IRLMS6702TR Specifications
| Part Number | IRLMS6702TR | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 700mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 4.5V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.7W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Micro6™(SOT23-6) | |
| Package / Case | SOT-23-6 |
IRLMS6702TR Documents
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