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Part Number | IXFA12N65X2 |
OEMstron Part # | IXFA12N65X2 |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXFA12N65X2 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IXFA12N65X2 Specifications
Part Number | IXFA12N65X2 | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | HiPerFET™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 310mOhm @ 6A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 18.5nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1134pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 180W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-263AA | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXFA12N65X2 Documents
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In Stock | 252 - More on Order |
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Quote Limit | No Limit |
Lead-Time | Can Ship Immediately |
Minimum | 1 |
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Pricing (USD)
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 4.2307 | $ 4.2307 |
100 | $ 4.2307 | $ 423.0700 |
500 | $ 4.2307 | $ 2,115.3500 |
1000 | $ 4.2307 | $ 4,230.7000 |
2500 | $ 4.2307 | $ 10,576.7500 |
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