For Reference Only
Part Number | IXFB70N60Q2 |
OEMstron Part # | IXFB70N60Q2 |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 600V 70A PLUS264 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXFB70N60Q2 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IXFB70N60Q2 Specifications
Part Number | IXFB70N60Q2 | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | HiPerFET™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 88mOhm @ 35A, 10V | |
Vgs(th) (Max) @ Id | 5.5V @ 8mA | |
Gate Charge (Qg) (Max) @ Vgs | 265nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 890W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PLUS264™ | |
Package / Case | TO-264-3, TO-264AA |
IXFB70N60Q2 Documents
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Part Number | Description | Stock |
IXFB70N60Q2 IXYS Corporation |
MOSFET N-CH 600V 70A PLUS264 |
23 |
Part Number | Description | Stock |
IXFB70N60Q2 D# IXFB70N60Q2-ND IXYS Corporation |
MOSFET N-CH 600V 70A PLUS264 |
98 In Stock |
Part Number | Description | Stock |
IXFB70N60Q2 IXYS Corporation |
In stock shipping within 2days |
236 |
Part Number | Description | Stock |
IXFB70N60Q2 IXYS Corporation |
OEM/CM QUOTES ONLY | NO BROKERS |
116 |
Part Number | Description | Stock |
IXFB70N60Q2 D# NS-IXFB70N60Q2 IXYS Corporation |
OEM/CM ONLY |
3853 |
Part Number | Description | Stock |
IXFB70N60Q2 IXYS Corporation |
POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 600V, 0.088OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
19 |
Part Number | Description | Stock |
IXFB70N60Q2 IXYS Corporation |
OEM/CM ONLY |
60 |
Part Number | Description | Stock |
IXFB70N60Q2 IXYS Corporation |
RFQ |
5296 |
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Quick Inquiry
In Stock | 394 - More on Order |
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Quote Limit | No Limit |
Lead-Time | Can Ship Immediately |
Minimum | 1 |
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Pricing (USD)
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 35.2274 | $ 35.2274 |
100 | $ 35.2274 | $ 3,522.7400 |
500 | $ 35.2274 | $ 17,613.7000 |
1000 | $ 35.2274 | $ 35,227.4000 |
2500 | $ 35.2274 | $ 88,068.5000 |
OEMstron will offer the most competitive prices for you, please refer to the quotations.
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