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For Reference Only
| Part Number | IXFH26N100X |
| OEMstron Part # | IXFH26N100X |
| Manufacturer | IXYS |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET 1KV 26A ULTRA JCT TO247 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IXFH26N100X PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IXFH26N100X Specifications
| Part Number | IXFH26N100X | |
| Brand | IXYS | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | HiPerFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000V | |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 6V @ 4mA | |
| Gate Charge (Qg) (Max) @ Vgs | 113nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3290pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 860W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247 | |
| Package / Case | TO-247-3 |
IXFH26N100X Documents
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| In Stock | 292 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 20.8770 | $ 20.8770 |
| 100 | $ 20.8770 | $ 2,087.7000 |
| 500 | $ 20.8770 | $ 10,438.5000 |
| 1000 | $ 20.8770 | $ 20,877.0000 |
| 2500 | $ 20.8770 | $ 52,192.5000 |
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