For Reference Only
Part Number | IXFN30N110P |
OEMstron Part # | IXFN30N110P |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 1100V 25A SOT-227B |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXFN30N110P PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IXFN30N110P Specifications
Part Number | IXFN30N110P | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | Polar™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 1100V | |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 360mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 6.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 235nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 13600pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 695W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Supplier Device Package | SOT-227B | |
Package / Case | SOT-227-4, miniBLOC |
IXFN30N110P Documents
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IXFN30N110P IXYS Corporation |
Trans MOSFET N-CH 1.1KV 25A 4-Pin SOT-227B |
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IXFN30N110P D# IXFN30N110P-ND IXYS Corporation |
MOSFET N-CH 1100V 25A SOT-227B |
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IXFN30N110P IXYS Corporation |
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IXFN30N110P IXYS Corporation |
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IXFN30N110P IXYS Corporation |
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Part Number | Description | Stock |
IXFN30N110P IXYS Corporation |
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IXFN30N110P IXYS Corporation |
RFQ |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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