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Part Number | IXFN50N120SIC |
OEMstron Part # | IXFN50N120SIC |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXFN50N120SIC PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 21 - Jan 26 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IXFN50N120SIC Specifications
Part Number | IXFN50N120SIC | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | - | |
FET Type | N-Channel | |
Technology | SiC (Silicon Carbide Junction Transistor) | |
Drain to Source Voltage (Vdss) | 1200V | |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V | |
Vgs(th) (Max) @ Id | 2.2V @ 2mA | |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 20V | |
Vgs (Max) | +20V, -5V | |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 1000V | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Supplier Device Package | SOT-227B | |
Package / Case | SOT-227-4, miniBLOC |
IXFN50N120SIC Documents
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100 | $ 88.0729 | $ 8,807.2900 |
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