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Part Number | IXFN50N120SK |
OEMstron Part # | IXFN50N120SK |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXFN50N120SK PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IXFN50N120SK Specifications
Part Number | IXFN50N120SK | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | - | |
FET Type | N-Channel | |
Technology | SiC (Silicon Carbide Junction Transistor) | |
Drain to Source Voltage (Vdss) | 1200V | |
Current - Continuous Drain (Id) @ 25°C | 48A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 20V | |
Vgs(th) (Max) @ Id | 2.8V @ 10mA | |
Gate Charge (Qg) (Max) @ Vgs | 115nC @ 20V | |
Vgs (Max) | +20V, -5V | |
Input Capacitance (Ciss) (Max) @ Vds | 1895pF @ 1000V | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | -40°C ~ 175°C (TJ) | |
Mounting Type | Chassis Mount | |
Supplier Device Package | SOT-227B | |
Package / Case | SOT-227-4, miniBLOC |
IXFN50N120SK Documents
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Quick Inquiry
In Stock | 184 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Pricing (USD)
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 81.8608 | $ 81.8608 |
100 | $ 81.8608 | $ 8,186.0800 |
500 | $ 81.8608 | $ 40,930.4000 |
1000 | $ 81.8608 | $ 81,860.8000 |
2500 | $ 81.8608 | $ 204,652.0000 |
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