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| Part Number | IXFQ12N80P |
| OEMstron Part # | IXFQ12N80P |
| Manufacturer | IXYS |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 800V 12A TO-3P |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IXFQ12N80P PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IXFQ12N80P Specifications
| Part Number | IXFQ12N80P | |
| Brand | IXYS | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | HiPerFET™, PolarHT™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 360W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P | |
| Package / Case | TO-3P-3, SC-65-3 |
IXFQ12N80P Documents
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| Part Number | Description | Stock |
|
IXFQ12N80P IXYS Corporation |
MOSFET N-CH 800V 12A TO-3P |
Contact Us |
| Part Number | Description | Stock |
|
IXFQ12N80P D# IXFQ12N80P-ND IXYS Corporation |
MOSFET N-CH 800V 12A TO3P |
Temporarily Out of Stock |
| Part Number | Description | Stock |
|
IXFQ12N80P D# NS-IXFQ12N80P IXYS Corporation |
OEM/CM ONLY |
8365 |
| Part Number | Description | Stock |
|
IXFQ12N80P IXYS Corporation |
RFQ |
1611 |
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| In Stock | 452 - More on Order |
|---|---|
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| Minimum | 1 |
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