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Part Number | IXFT26N100XHV |
OEMstron Part # | IXFT26N100XHV |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET 1000V 26A ULTRA JUNCTION |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXFT26N100XHV PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 21 - Jan 26 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IXFT26N100XHV Specifications
Part Number | IXFT26N100XHV | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | HiPerFET™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 1000V | |
Current - Continuous Drain (Id) @ 25°C | 26A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 320mOhm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 1V @ 4mA | |
Gate Charge (Qg) (Max) @ Vgs | 113nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 3290pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 860mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-268HV (IXFT) | |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXFT26N100XHV Documents
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
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100 | $ 19.2745 | $ 1,927.4500 |
500 | $ 19.2745 | $ 9,637.2500 |
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