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Part Number | IXFT60N65X2HV |
OEMstron Part # | IXFT60N65X2HV |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXFT60N65X2HV PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 21 - Jan 26 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IXFT60N65X2HV Specifications
Part Number | IXFT60N65X2HV | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | HiPerFET™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 4mA | |
Gate Charge (Qg) (Max) @ Vgs | 108nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 6300pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 780W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-268HV | |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXFT60N65X2HV Documents
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In Stock | 460 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
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1 | $ 13.7298 | $ 13.7298 |
100 | $ 13.7298 | $ 1,372.9800 |
500 | $ 13.7298 | $ 6,864.9000 |
1000 | $ 13.7298 | $ 13,729.8000 |
2500 | $ 13.7298 | $ 34,324.5000 |
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