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IXTA1R6N100D2HV

IXTA1R6N100D2HV
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Part Number IXTA1R6N100D2HV
OEMstron Part # IXTA1R6N100D2HV
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXTA1R6N100D2HV PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IXTA1R6N100D2HV Specifications

Part Number IXTA1R6N100D2HV
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 10V
FET Feature Depletion Mode
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTA1R6N100D2HV Documents

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Qty.Unit PriceExt. Price
1$ 4.8855$ 4.8855
100$ 4.8855$ 488.5500
500$ 4.8855$ 2,442.7500
1000$ 4.8855$ 4,885.5000
2500$ 4.8855$ 12,213.7500

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