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| Part Number | IXTA1R6N100D2HV |
| OEMstron Part # | IXTA1R6N100D2HV |
| Manufacturer | IXYS |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IXTA1R6N100D2HV PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 6 - Mar 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IXTA1R6N100D2HV Specifications
| Part Number | IXTA1R6N100D2HV | |
| Brand | IXYS | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000V | |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 0V | |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 800mA, 0V | |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 645pF @ 10V | |
| FET Feature | Depletion Mode | |
| Power Dissipation (Max) | 100W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263HV | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA1R6N100D2HV Documents
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| In Stock | 352 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| Qty. | Unit Price | Ext. Price |
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| 1 | $ 4.8855 | $ 4.8855 |
| 100 | $ 4.8855 | $ 488.5500 |
| 500 | $ 4.8855 | $ 2,442.7500 |
| 1000 | $ 4.8855 | $ 4,885.5000 |
| 2500 | $ 4.8855 | $ 12,213.7500 |
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