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Part Number | IXTA1R6N100D2HV |
OEMstron Part # | IXTA1R6N100D2HV |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXTA1R6N100D2HV PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IXTA1R6N100D2HV Specifications
Part Number | IXTA1R6N100D2HV | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 1000V | |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Tj) | |
Drive Voltage (Max Rds On, Min Rds On) | 0V | |
Rds On (Max) @ Id, Vgs | 10Ohm @ 800mA, 0V | |
Vgs(th) (Max) @ Id | 4.5V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 5V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 645pF @ 10V | |
FET Feature | Depletion Mode | |
Power Dissipation (Max) | 100W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-263HV | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA1R6N100D2HV Documents
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In Stock | 352 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Pricing (USD)
Qty. | Unit Price | Ext. Price |
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1 | $ 4.8855 | $ 4.8855 |
100 | $ 4.8855 | $ 488.5500 |
500 | $ 4.8855 | $ 2,442.7500 |
1000 | $ 4.8855 | $ 4,885.5000 |
2500 | $ 4.8855 | $ 12,213.7500 |
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