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For Reference Only
| Part Number | IXTF6N200P3 |
| OEMstron Part # | IXTF6N200P3 |
| Manufacturer | IXYS |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IXTF6N200P3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IXTF6N200P3 Specifications
| Part Number | IXTF6N200P3 | |
| Brand | IXYS | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | Polar™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 2000V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 143nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 215W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | ISOPLUS i4-PAC™ | |
| Package / Case | ISOPLUSi5-Pak™ |
IXTF6N200P3 Documents
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| In Stock | 415 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 32.4067 | $ 32.4067 |
| 100 | $ 32.4067 | $ 3,240.6700 |
| 500 | $ 32.4067 | $ 16,203.3500 |
| 1000 | $ 32.4067 | $ 32,406.7000 |
| 2500 | $ 32.4067 | $ 81,016.7500 |
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