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Part Number | IXTM67N10 |
OEMstron Part # | IXTM67N10 |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | POWER MOSFET TO-3 |
Lifecycle | Last Time Buy |
RoHS | No RoHS Information |
EDA/CAD Models | IXTM67N10 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IXTM67N10 Specifications
Part Number | IXTM67N10 | |
Brand | IXYS | |
Lifecycle | Last Time Buy | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | GigaMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 67A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 33.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 4mA | |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 300W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-204AE | |
Package / Case | TO-204AE |
IXTM67N10 Documents
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