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Part Number | IXTP12N65X2M |
OEMstron Part # | IXTP12N65X2M |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH TO-220 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IXTP12N65X2M PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 2 - Feb 7 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IXTP12N65X2M Specifications
Part Number | IXTP12N65X2M | |
Brand | IXYS | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 300mOhm @ 6A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 17.7nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 40W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220 Isolated Tab | |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
IXTP12N65X2M Documents
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In Stock | 381 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Pricing (USD)
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 3.0968 | $ 3.0968 |
100 | $ 3.0968 | $ 309.6800 |
500 | $ 3.0968 | $ 1,548.4000 |
1000 | $ 3.0968 | $ 3,096.8000 |
2500 | $ 3.0968 | $ 7,742.0000 |
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