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Part Number | IXTU1R4N60P |
OEMstron Part # | IXTU1R4N60P |
Manufacturer | IXYS |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 600V 1.4A TO251 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IXTU1R4N60P PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IXTU1R4N60P Specifications
Part Number | IXTU1R4N60P | |
Brand | IXYS | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | IXYS | |
Series | PolarHV™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 9Ohm @ 700mA, 10V | |
Vgs(th) (Max) @ Id | 5.5V @ 25µA | |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 50W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-251 | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
IXTU1R4N60P Documents
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Part Number | Description | Stock |
IXTU1R4N60P IXYS Corporation |
MOSFET N-CH 600V 1.4A TO251 |
Contact Us |
Part Number | Description | Stock |
IXTU1R4N60P D# IXTU1R4N60P-ND IXYS Corporation |
MOSFET N-CH 600V 1.4A TO251 |
Limited Supply - Call |
Part Number | Description | Stock |
IXTU1R4N60P VBsemi Electronics Co Ltd |
In stock shipping within 2days |
5260 |
Part Number | Description | Stock |
IXTU1R4N60P D# NS-IXTU1R4N60P IXYS Corporation |
OEM/CM ONLY |
7255 |
Part Number | Description | Stock |
IXTU1R4N60P IXYS Integrated Circuits Division |
shipping today |
50001 |
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