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Part Number | NP80N055NDG-S18-AY |
OEMstron Part # | NP80N055NDG-S18-AY |
Manufacturer | Renesas Electronics America |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 55V 80A TO-262 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | NP80N055NDG-S18-AY PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
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NP80N055NDG-S18-AY Specifications
Part Number | NP80N055NDG-S18-AY | |
Brand | Renesas Electronics America | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Renesas Electronics America | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 55V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 6.9mOhm @ 40A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 6900pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) | |
Operating Temperature | 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-262 | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
NP80N055NDG-S18-AY Documents
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Part Number | Description | Stock |
NP80N055NDG-S18-AY Renesas Electronics Corporation |
MOSFET N-CH 55V 80A TO-262 |
Contact Us |
Part Number | Description | Stock |
NP80N055NDG-S18-AY D# NP80N055NDG-S18-AY-ND Renesas Electronics Corporation |
MOSFET N-CH 55V 80A TO262 |
Limited Supply - Call |
Part Number | Description | Stock |
NP80N055NDG-S18-AY D# NS-NP80N055NDG-S18-AY Renesas Electronics Corporation |
OEM/CM ONLY |
4383 |
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