For Reference Only
Part Number | NTB52N10T4G |
OEMstron Part # | NTB52N10T4G |
Manufacturer | ON Semiconductor |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 52A D2PAK |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | NTB52N10T4G PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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NTB52N10T4G Specifications
Part Number | NTB52N10T4G | |
Brand | ON Semiconductor | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | ON Semiconductor | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 52A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 30mOhm @ 26A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3150pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 2W (Ta), 178W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | D2PAK | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
NTB52N10T4G Documents
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Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement-Mode |
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MOSFET N-CH 100V 52A D2PAK |
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