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Part Number | NTD6600N-001 |
OEMstron Part # | NTD6600N-001 |
Manufacturer | ON Semiconductor |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 12A IPAK |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | NTD6600N-001 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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NTD6600N-001 Specifications
Part Number | NTD6600N-001 | |
Brand | ON Semiconductor | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | ON Semiconductor | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
Rds On (Max) @ Id, Vgs | 146mOhm @ 6A, 5V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | I-PAK | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
NTD6600N-001 Documents
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MOSFET N-CH 100V 12A IPAK |
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MOSFET N-CH 100V 12A IPAK |
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