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| Part Number | NVMFSW6D1N08HT1G |
| OEMstron Part # | NVMFSW6D1N08HT1G |
| Manufacturer | ON Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | T8 80V 1 PART PROLIFERATI |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | NVMFSW6D1N08HT1G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
NVMFSW6D1N08HT1G Specifications
| Part Number | NVMFSW6D1N08HT1G | |
| Brand | ON Semiconductor | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Series | Automotive, AEC-Q101 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 80V | |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 89A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 120µA | |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2085pF @ 40V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 104W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
| Package / Case | 8-PowerTDFN, 5 Leads |
NVMFSW6D1N08HT1G Documents
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| In Stock | 230 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.7591 | $ 0.7591 |
| 100 | $ 0.7591 | $ 75.9100 |
| 500 | $ 0.7591 | $ 379.5500 |
| 1000 | $ 0.7591 | $ 759.1000 |
| 2500 | $ 0.7591 | $ 1,897.7500 |
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