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For Reference Only
| Part Number | RN1106MFV,L3F |
| OEMstron Part # | RN1106MFV-L3F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - Single, Pre-Biased |
| Description | TRANS PREBIAS NPN |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | RN1106MFV,L3F PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
RN1106MFV Specifications
| Part Number | RN1106MFV,L3F | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 4.7 kOhms | |
| Resistor - Emitter Base (R2) | 47 kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 150mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Supplier Device Package | VESM |
RN1106MFV,L3F Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
RN1106MFV,L3F(CB Toshiba America Electronic Components |
RoHS (ship within 1day) - D/C 2020 |
7200 |
| Part Number | Description | Stock |
|
RN1106MFV,L3F D# RN1106MFVL3FCT-ND Toshiba America Electronic Components |
TRANS PREBIAS NPN 50V 0.1A VESM |
15450 In Stock |
|
RN1106MFV,L3F(CT D# 264-RN1106MFVL3F(CT-ND Toshiba America Electronic Components |
TRANS PREBIAS NPN 50V 0.1A VESM |
8011 In Stock |
| Part Number | Description | Stock |
|
RN1106MFVL3FCB Toshiba America Electronic Components |
OEM/CM QUOTES ONLY | NO BROKERS |
13757 |
|
RN1106MFVL3FCT "TOSHIBA SEMICONDUCTOR AND" |
OEM/CM QUOTES ONLY | NO BROKERS |
9600 |
|
RN1106MFVL3FT Toshiba America Electronic Components |
OEM/CM QUOTES ONLY | NO BROKERS |
108000 |
|
RN1106MFVL3F "TOSHIBA PARTNER" |
OEM/CM QUOTES ONLY | NO BROKERS |
12000 |
| Part Number | Description | Stock |
|
RN1106MFV,L3F D# 757-RN1106MFVL3F Toshiba America Electronic Components |
Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO RoHS: Compliant
|
13284 |
| Part Number | Description | Stock |
|
RN1106MFV,L3F(CB Toshiba America Electronic Components |
5760 |
| Part Number | Description | Stock |
|
RN1106MFVL3FCB Toshiba America Electronic Components |
OEM/CM ONLY |
7816 |
|
RN1106MFVL3F Toshiba America Electronic Components |
OEM/CM ONLY |
10016 |
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| In Stock | 290 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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