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Part Number | SI1403BDL-T1-GE3 |
OEMstron Part # | SI1403BDL-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 20V 1.5A SC70-6 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SI1403BDL-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SI1403BDL-T1-GE3 Specifications
Part Number | SI1403BDL-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 150mOhm @ 1.5A, 4.5V | |
Vgs(th) (Max) @ Id | 1.3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 4.5V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | 625mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | SC-70-6 | |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
SI1403BDL-T1-GE3 Documents
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