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| Part Number | SI2304BDS-T1-GE3 |
| OEMstron Part # | SI2304BDS-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 30V 2.6A SOT23-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI2304BDS-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI2304BDS-T1-GE3 Specifications
| Part Number | SI2304BDS-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 750mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
SI2304BDS-T1-GE3 Documents
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| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 D# V72:2272_07432760 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant
|
Americas - 2494 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 D# SI2304BDS-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2304BDS-T1-GE3) |
Americas - 3000 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 D# SI2304BDS-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R (Alt: SI2304BDS-T1-GE3) |
Europe - 0 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 Vishay Siliconix |
MOSFET N-CH 30V 2.6A SOT23-3 |
54000 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 Vishay Intertechnologies |
N-Channel 30V 3.2A 3V @ 250uA 70mohms @ 2.5A,10V 750mW SOT-23(SOT-23-3) MOSFET RoHS |
4363 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 D# SI2304BDS-T1-GE3CT-ND Vishay Siliconix |
MOSFET N-CH 30V 2.6A SOT23-3 |
15085 In Stock |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 Vishay Intertechnologies |
RoHS: Compliant
pbFree: Yes
|
0 Reel |
| Part Number | Description | Stock |
|
SI2304BDST1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
64415 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 D# C81446 Vishay Intertechnologies |
4362 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
500000 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 D# 781-SI2304BDS-T1-GE3 Vishay Intertechnologies |
MOSFET 30V 3.2A 1.08W 70mohm @ 10V RoHS: Compliant
|
7369 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3. D# 28AC2124 Vishay Intertechnologies |
Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:2.6A, On Resistance Rds(on):0.055ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Product Range:-RoHS Compliant: No RoHS: Not Compliant
Min Qty: 3000
Container: TAPE & REEL - FULL
|
3000 |
|
SI2304BDS-T1-GE3 D# 16P3704 Vishay Intertechnologies |
N CHANNEL MOSFET, 30V, 3.2A, TO-236, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:3.2A, On Resistance Rds(on):0.105ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:20V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
4122 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 D# NS-SI2304BDS-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
15048 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 Vishay Siliconix |
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.6A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AA |
3975 |
| Part Number | Description | Stock |
|
SI2304BDST1GE3 Vishay Siliconix |
OEM/CM ONLY |
4388 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 Vishay Intertechnologies |
IN stock Immediate delivery |
499985 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 Vishay Intertechnologies |
MOSFET 30V 3.2A 1.08W 70mohm @ 10V pbFree: Pb-Free
|
Americas - 0 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 Vishay Huntington |
shipping today |
1042 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 D# 32396212 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant
|
Americas - 2616 |
| Part Number | Description | Stock |
|
SI2304BDS-T1-GE3 Vishay Huntington |
MOSFET N-CH 30V 2.6A SOT23-3 |
41394 |
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| In Stock | 61,601 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
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