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Part Number | SI3473DDV-T1-GE3 |
OEMstron Part # | SI3473DDV-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CHANNEL 12V 8A 6TSOP |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SI3473DDV-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SI3473DDV-T1-GE3 Specifications
Part Number | SI3473DDV-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® Gen III | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 12V | |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 17.8mOhm @ 8.7A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 8V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1975pF @ 6V | |
FET Feature | - | |
Power Dissipation (Max) | 3.6W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 6-TSOP | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
SI3473DDV-T1-GE3 Documents
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