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| Part Number | SI3812DV-T1-E3 |
| OEMstron Part # | SI3812DV-T1-E3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 20V 2A 6-TSOP |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI3812DV-T1-E3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI3812DV-T1-E3 Specifications
| Part Number | SI3812DV-T1-E3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | LITTLE FOOT® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) | |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | Schottky Diode (Isolated) | |
| Power Dissipation (Max) | 830mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
SI3812DV-T1-E3 Documents
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| Part Number | Description | Stock |
|
SI3812DV-T1-E3 Vishay Siliconix |
MOSFET N-CH 20V 2A 6-TSOP |
Contact Us |
| Part Number | Description | Stock |
|
SI3812DV-T1-E3 D# SI3812DV-T1-E3TR-ND Vishay Siliconix |
MOSFET N-CH 20V 2A 6TSOP |
Limited Supply - Call |
| Part Number | Description | Stock |
|
SI3812DV-T1-E3 D# NS-SI3812DV-T1-E3 Vishay Siliconix |
OEM/CM ONLY |
5394 |
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