Semiconductors
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For Reference Only
| Part Number | SI3867DV-T1-E3 |
| OEMstron Part # | SI3867DV-T1-E3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 20V 3.9A 6-TSOP |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI3867DV-T1-E3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI3867DV-T1-E3 Specifications
| Part Number | SI3867DV-T1-E3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 5.1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.1W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
SI3867DV-T1-E3 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 Vishay Siliconix |
MOSFET, P CH, -20V, -3.9A, TSOP |
1500 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 D# SI3867DV-T1-E3TR-ND Vishay Siliconix |
MOSFET P-CH 20V 3.9A 6TSOP |
Limited Supply - Call |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 Vishay Intertechnologies |
In stock shipping within 2days |
33525 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 D# 2335301 Vishay Intertechnologies |
MOSFET, P CH, -20V, -3.9A, TSOP RoHS: Compliant
Min Qty: 1
Container: Each
|
0 |
| Part Number | Description | Stock |
|
SI3867DVT1E3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
32130 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 Vishay Intertechnologies |
in stock - can ship the same day |
1435 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
45000 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 D# NS-SI3867DV-T1-E3 Vishay Siliconix |
OEM/CM ONLY |
3051 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 Vishay Siliconix |
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
295 |
| Part Number | Description | Stock |
|
SI3867DVT1E3 Vishay Siliconix |
OEM/CM ONLY |
27016 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 Vishay Intertechnologies |
IN stock Immediate delivery |
44985 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 Vishay Huntington |
shipping today |
44999 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 Vishay Intertechnologies |
RFQ |
2950 |
| Part Number | Description | Stock |
|
SI3867DV-T1-E3 D# 2335301 Vishay Intertechnologies |
MOSFET, P CH, -20V, -3.9A, TSOP RoHS: Compliant
Min Qty: 1
Container: Each
|
0 |
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| In Stock | 489 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
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