For Reference Only
Part Number | SI4102DY-T1-GE3 |
OEMstron Part # | SI4102DY-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 3.8A 8-SOIC |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SI4102DY-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
SI4102DY-T1-GE3 Specifications
Part Number | SI4102DY-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 158mOhm @ 2.7A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 2.4W (Ta), 4.8W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SO | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
SI4102DY-T1-GE3 Documents
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Part Number | Description | Stock |
SI4102DY-T1-GE3 Vishay Semiconductors |
- Tape and Reel |
2500 |
Part Number | Description | Stock |
SI4102DYT1GE3 Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 0.0027A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant
|
Europe - 2500 |
Part Number | Description | Stock |
SI4102DY-T1-GE3 D# SI4102DY-T1-GE3TR-ND Vishay Siliconix |
MOSFET N-CH 100V 3.8A 8SO |
Limited Supply - Call |
Part Number | Description | Stock |
SI4102DY-T1-GE3 D# 1779249RL Vishay Intertechnologies |
MOSFET, N-CH, 100V, 3.8A, SO8 RoHS: Compliant
Min Qty: 5
Container: Reel
|
0 |
Part Number | Description | Stock |
SI4102DYT1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
14875 |
Part Number | Description | Stock |
SI4102DY-T1-GE3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
180000 |
Part Number | Description | Stock |
SI4102DY-T1-GE3 D# 55R1915 Vishay Intertechnologies |
MOSFET, N CHANNEL, 100V, 3.8A, SO8, Transistor Polarity:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:3.8A, On Resistance Rds(on):0.13ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 5
Container: Cut Tape
|
0 |
Part Number | Description | Stock |
SI4102DY-T1-GE3 D# NS-SI4102DY-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
4146 |
Part Number | Description | Stock |
SI4102DYT1GE3 Vishay Siliconix |
OEM/CM ONLY |
7515 |
Part Number | Description | Stock |
SI4102DY-T1-GE3 Vishay Intertechnologies |
IN stock Immediate delivery |
179985 |
Part Number | Description | Stock |
SI4102DY-T1-GE3 Vishay Huntington |
shipping today |
105 |
Part Number | Description | Stock |
SI4102DY-T1-GE3 Vishay Huntington |
MOSFET N-CH 100V 3.8A 8-SOIC |
15170 |
Part Number | Description | Stock |
SI4102DY-T1-GE3 D# 1779249 Vishay Intertechnologies |
MOSFET, N-CH, 100V, 3.8A, SO8 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
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