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For Reference Only
| Part Number | SI4425BDY-T1-GE3 |
| OEMstron Part # | SI4425BDY-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 30V 8.8A 8-SOIC |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI4425BDY-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 2 - Feb 7 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI4425BDY-T1-GE3 Specifications
| Part Number | SI4425BDY-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11.4A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.5W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SO | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
SI4425BDY-T1-GE3 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 D# V36:1790_09216483 Vishay Intertechnologies |
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 D# SI4425BDY-T1-GE3 Vishay Intertechnologies |
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4425BDY-T1-GE3) |
Americas - 2500 |
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 D# SI4425BDY-T1-GE3 Vishay Intertechnologies |
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R (Alt: SI4425BDY-T1-GE3) |
Europe - 0 |
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 Vishay Semiconductors |
- Tape and Reel |
Contact Us |
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 D# SI4425BDY-T1-GE3CT-ND Vishay Siliconix |
MOSFET P-CH 30V 8.8A 8SO |
1968 In Stock |
| Part Number | Description | Stock |
|
SI4425BDYT1GE3 |
OEM/CM QUOTES ONLY | NO BROKERS |
5950 |
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
89742 |
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 D# 781-SI4425BDY-GE3 Vishay Intertechnologies |
MOSFET 30V 11.4A 2.5W 12mohm @ 10V RoHS: Compliant
|
2664 |
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 D# 26R1875 Vishay Intertechnologies |
P CHANNEL MOSFET, Transistor Polarity:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:11.4A, On Resistance Rds(on):0.019ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:4.5V, No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant
Min Qty: 2500
Container: Cut Tape
|
0 |
|
SI4425BDY-T1-GE3. D# 28AC2137 Vishay Intertechnologies |
Transistor Polarity:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:8.8A, On Resistance Rds(on):0.01ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3mV, Product Range:-RoHS Compliant: No RoHS: Not Compliant
Min Qty: 2500
Container: TAPE & REEL - FULL
|
2500 |
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 D# NS-SI4425BDY-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
6632 |
| Part Number | Description | Stock |
|
SI4425BDYT1GE3 Vishay Intertechnologies |
OEM/CM ONLY |
5016 |
| Part Number | Description | Stock |
|
SI4425BDY-T1-GE3 Vishay Intertechnologies |
IN stock Immediate delivery |
89727 |
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| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
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| 100 | $ 0.0000 | $ 0.0000 |
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