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For Reference Only
| Part Number | SI4686DY-T1-GE3 |
| OEMstron Part # | SI4686DY-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 30V 18.2A 8-SOIC |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI4686DY-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SI4686DY-T1-GE3 Specifications
| Part Number | SI4686DY-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET®, WFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 18.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 13.8A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3W (Ta), 5.2W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SO | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
SI4686DY-T1-GE3 Documents
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| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 D# V36:1790_09215584 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 18.2A 8-Pin SOIC N T/R |
Americas - 0 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 D# SI4686DY-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-GE3) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 D# SI4686DY-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-GE3) RoHS: Compliant
|
Europe - 0 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 Vishay Semiconductors |
- Tape and Reel |
Contact Us |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 D# SI4686DY-T1-GE3CT-ND Vishay Siliconix |
MOSFET N-CH 30V 18.2A 8SO |
2000 In Stock |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 Vishay Intertechnologies |
In stock shipping within 2days |
24035 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 Vishay Intertechnologies |
RoHS: Compliant
pbFree: Yes
|
0 |
| Part Number | Description | Stock |
|
SI4686DYT1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
28292 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
76325 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 D# 781-SI4686DY-T1-GE3 Vishay Intertechnologies |
MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V RoHS: Compliant
|
2060 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 D# 26R1888 Vishay Intertechnologies |
N CHANNEL MOSFET, 30V, 18.2A, SOIC, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:18.2A, On Resistance Rds(on):0.014ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 2500
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 D# NS-SI4686DY-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
4734 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 Vishay Intertechnologies |
IN stock Immediate delivery |
76310 |
| Part Number | Description | Stock |
|
SI4686DY-T1-GE3 Vishay Huntington |
MOSFET N-CH 30V 18.2A 8-SOIC |
14164 |
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| In Stock | 270 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
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| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
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