For Reference Only
Part Number | SI4800BDY-T1-GE3 |
OEMstron Part # | SI4800BDY-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 30V 6.5A 8-SOIC |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SI4800BDY-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
SI4800BDY-T1-GE3 Specifications
Part Number | SI4800BDY-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 18.5mOhm @ 9A, 10V | |
Vgs(th) (Max) @ Id | 1.8V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | 1.3W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SO | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
SI4800BDY-T1-GE3 Documents
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Part Number | Description | Stock |
SI4800BDY-T1-GE3 D# V72:2272_09216570 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant
|
Americas - 2226 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 D# SI4800BDY-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3) |
Americas - 0 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 D# SI4800BDY-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3) |
Asia - 2500 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 D# SI4800BDY-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3) |
Europe - 0 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Intertechnologies |
3089 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Siliconix |
MOSFET N-CH 30V 6.5A 8-SOIC |
Contact Us |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Intertechnologies |
N VDS=30V VGS=25V ID=6.5A P=1.3W |
6111 |
Part Number | Description | Stock |
SI4800BDYT1GE3 Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant
|
Europe - 2500 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 D# SI4800BDY-T1-GE3CT-ND Vishay Siliconix |
MOSFET N-CH 30V 6.5A 8SO |
4513 In Stock |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Intertechnologies |
In stock shipping within 2days |
18423 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Intertechnologies |
N-CH REDUCED QG, FAST SWITCHING MOSF RoHS: Compliant
pbFree: Yes
|
0 Reel |
Part Number | Description | Stock |
SI4800BDYT1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
8925 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
76325 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 D# 781-SI4800BDY-T1-GE3 Vishay Intertechnologies |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V RoHS: Compliant
|
123 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 D# 16P3753 Vishay Intertechnologies |
N CHANNEL MOSFET, 30V, 9A, SOIC, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, On Resistance Rds(on):0.03ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:25V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 2500
Container: Cut Tape
|
0 |
SI4800BDY-T1-GE3. D# 16AC0256 Vishay Intertechnologies |
Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, On Resistance Rds(on):0.03ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:25V, Threshold Voltage Vgs:25V, No. of Pins:8PinsRoHS Compliant: No RoHS: Not Compliant
Min Qty: 2500
Container: TAPE & REEL - FULL
|
0 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 D# NS-SI4800BDY-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
2596 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Intertechnologies |
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA |
50 |
Part Number | Description | Stock |
SI4800BDYT1GE3 Vishay Siliconix |
OEM/CM ONLY |
3155 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Intertechnologies |
IN stock Immediate delivery |
76310 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Huntington |
shipping today |
12496 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 D# 35140026 Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant
|
Americas - 2226 |
Part Number | Description | Stock |
SI4800BDY-T1-GE3 Vishay Huntington |
MOSFET N-CH 30V 6.5A 8-SOIC |
59243 |
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Quote Limit | No Limit |
Lead-Time | Can Ship Immediately |
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