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SI4888DY-T1-GE3

SI4888DY-T1-GE3
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Part Number SI4888DY-T1-GE3
OEMstron Part # SI4888DY-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 11A 8-SOIC
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI4888DY-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SI4888DY-T1-GE3 Specifications

Part Number SI4888DY-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

SI4888DY-T1-GE3 Documents

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Part Number Description Stock

SI4888DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 11A 8-SOIC

Contact Us
Part Number Description Stock

SI4888DY-T1-GE3

D# SI4888DY-T1-GE3-ND

Vishay Siliconix

MOSFET N-CH 30V 11A 8SO

Limited Supply - Call
Part Number Description Stock

SI4888DY-T1-GE3

Vishay Intertechnologies

OEM/CM Immediate delivery

76325
Part Number Description Stock

SI4888DY-T1-GE3

D# NS-SI4888DY-T1-GE3

Vishay Siliconix

OEM/CM ONLY

1364
Part Number Description Stock

SI4888DY-T1-GE3

Vishay Intertechnologies

IN stock Immediate delivery

76310

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