For Reference Only
Part Number | SI4892DY-T1-GE3 |
OEMstron Part # | SI4892DY-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 30V 8.8A 8-SOIC |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SI4892DY-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SI4892DY-T1-GE3 Specifications
Part Number | SI4892DY-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 12.4A, 10V | |
Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) | |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | 1.6W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SO | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
SI4892DY-T1-GE3 Documents
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SI4892DY-T1-GE3 Vishay Siliconix |
MOSFET N-CH 30V 8.8A 8-SOIC |
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SI4892DY-T1-GE3 D# SI4892DY-T1-GE3-ND Vishay Siliconix |
MOSFET N-CH 30V 8.8A 8SO |
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SI4892DY-T1-GE3 Vishay Intertechnologies |
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SI4892DY-T1-GE3 D# NS-SI4892DY-T1-GE3 Vishay Siliconix |
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SI4892DY-T1-GE3 Vishay Intertechnologies |
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