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Part Number | SI5857DU-T1-E3 |
OEMstron Part # | SI5857DU-T1-E3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 20V 6A PPAK CHIPFET |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SI5857DU-T1-E3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SI5857DU-T1-E3 Specifications
Part Number | SI5857DU-T1-E3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | LITTLE FOOT® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 58mOhm @ 3.6A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 10V | |
FET Feature | Schottky Diode (Isolated) | |
Power Dissipation (Max) | 2.3W (Ta), 10.4W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® ChipFet Dual | |
Package / Case | PowerPAK® ChipFET™ Dual |
SI5857DU-T1-E3 Documents
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Part Number | Description | Stock |
SI5857DU-T1-E3 Vishay Siliconix |
MOSFET P-CH 20V 6A PPAK CHIPFET |
Contact Us |
Part Number | Description | Stock |
SI5857DU-T1-E3 D# SI5857DU-T1-E3TR-ND Vishay Siliconix |
MOSFET P-CH 20V 6A PPAK CHIPFET |
Limited Supply - Call |
Part Number | Description | Stock |
SI5857DUT1E3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
36 |
Part Number | Description | Stock |
SI5857DU-T1-E3 D# NS-SI5857DU-T1-E3 Vishay Siliconix |
OEM/CM ONLY |
3717 |
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