For Reference Only
Part Number | SI7405BDN-T1-GE3 |
OEMstron Part # | SI7405BDN-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 12V 16A 1212-8 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SI7405BDN-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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SI7405BDN-T1-GE3 Specifications
Part Number | SI7405BDN-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 12V | |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 13mOhm @ 13.5A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 115nC @ 8V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 6V | |
FET Feature | - | |
Power Dissipation (Max) | 3.6W (Ta), 33W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® 1212-8 | |
Package / Case | PowerPAK® 1212-8 |
SI7405BDN-T1-GE3 Documents
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SI7405BDN-T1-GE3 Vishay Intertechnologies |
P-Channel 12 V 0.013 O 115 nC Surface Mount Power Mosfet - PowerPAK-1212-8 |
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Part Number | Description | Stock |
SI7405BDN-T1-GE3 D# SI7405BDN-T1-GE3TR-ND Vishay Siliconix |
MOSFET P-CH 12V 16A PPAK1212-8 |
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SI7405BDN-T1-GE3 Vishay Intertechnologies |
In stock shipping within 2days |
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SI7405BDN-T1-GE3 Vishay Intertechnologies |
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SI7405BDNT1GE3 Vishay Siliconix |
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SI7405BDN-T1-GE3 Vishay Huntington |
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SI7405BDN-T1-GE3 Vishay Huntington |
MOSFET P-CH 12V 16A 1212-8 |
1884 |
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