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Part Number | SI7457DP-T1-GE3 |
OEMstron Part # | SI7457DP-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 100V 28A PPAK SO-8 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SI7457DP-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SI7457DP-T1-GE3 Specifications
Part Number | SI7457DP-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 42mOhm @ 7.9A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5230pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 5.2W (Ta), 83.3W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® SO-8 | |
Package / Case | PowerPAK® SO-8 |
SI7457DP-T1-GE3 Documents
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Part Number | Description | Stock |
SI7457DP-T1-GE3 Vishay Siliconix |
P-CHANNEL 100-V (D-S) MOSFET - Tape and Reel |
Contact Us |
Part Number | Description | Stock |
SI7457DP-T1-GE3 D# SI7457DP-T1-GE3-ND Vishay Siliconix |
MOSFET P-CH 100V 28A PPAK SO-8 |
Limited Supply - Call |
Part Number | Description | Stock |
SI7457DP-T1-GE3 D# NS-SI7457DP-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
6619 |
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