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SI7792DP-T1-GE3

SI7792DP-T1-GE3
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For Reference Only

Part Number SI7792DP-T1-GE3
OEMstron Part # SI7792DP-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V P-PACK SO-8
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI7792DP-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Apr 8 - Apr 13 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SI7792DP-T1-GE3 Specifications

Part Number SI7792DP-T1-GE3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series SkyFET®, TrenchFET® Gen III
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40.6A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4.735nF @ 15V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

SI7792DP-T1-GE3 Documents

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