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For Reference Only
| Part Number | SIA417DJ-T1-GE3 |
| OEMstron Part # | SIA417DJ-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 8V 12A SC70-6 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIA417DJ-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SIA417DJ-T1-GE3 Specifications
| Part Number | SIA417DJ-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 8V | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 5V | |
| Vgs (Max) | ±5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 4V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SC-70-6 Single | |
| Package / Case | PowerPAK® SC-70-6 |
SIA417DJ-T1-GE3 Documents
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| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 Vishay Siliconix |
P CHANNEL MOSFET, -8V, 12A, SC-70 |
Contact Us |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 D# SIA417DJ-T1-GE3TR-ND Vishay Siliconix |
MOSFET P-CH 8V 12A PPAK SC70-6 |
Limited Supply - Call |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 Vishay Intertechnologies |
In stock shipping within 2days |
5699 |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 D# 2335095 Vishay Intertechnologies |
MOSFET, P CH, -8V, -12A, POWERPAK SC70 RoHS: Compliant
Min Qty: 3000
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
SIA417DJT1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
136850 |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
49985 |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 D# 25AJ2816 Vishay Intertechnologies |
MOSFET, P CH, -8V, -12A, POWERPAK SC70, Transistor Polarity:P Channel, Continuous Drain Current Id:-12A, Drain Source Voltage Vds:-8V, On Resistance Rds(on):0.019ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 3000
Container: TAPE & REEL - FULL
|
0 |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 D# NS-SIA417DJ-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
1946 |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 Vishay Siliconix |
POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 8V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
2525 |
| Part Number | Description | Stock |
|
SIA417DJT1GE3 Vishay Siliconix |
OEM/CM ONLY |
121439 |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 Vishay Intertechnologies |
IN stock Immediate delivery |
49970 |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 Vishay Huntington |
shipping today |
5755 |
| Part Number | Description | Stock |
|
SIA417DJ-T1-GE3 Vishay Intertechnologies |
RFQ |
8175 |
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| In Stock | 449 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
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| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
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