For Reference Only
Part Number | SIA429DJT-T1-GE3 |
OEMstron Part # | SIA429DJT-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 20V 12A SC-70 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SIA429DJT-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
SIA429DJT-T1-GE3 Specifications
Part Number | SIA429DJT-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 20.5mOhm @ 6A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 8V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 10V | |
FET Feature | - | |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® SC-70-6 Single | |
Package / Case | PowerPAK® SC-70-6 |
SIA429DJT-T1-GE3 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# 70617012 Vishay Siliconix |
SIA429DJT-T1-GE3 P-channel MOSFET Transistor, 8.5 A, 20 V, 6-Pin PowerPAK SC-70 RoHS: Not Compliant
|
0 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# E02:0323_03046298 Vishay Intertechnologies |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant
|
Europe - 3000 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# SIA429DJT-T1-GE3 Vishay Intertechnologies |
Trans MOSFET P-CH 20V 10.6A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA429DJT-T1-GE3) |
Americas - 0 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# SIA429DJT-T1-GE3 Vishay Intertechnologies |
Trans MOSFET P-CH 20V 10.6A 6-Pin PowerPAK SC-70 T/R (Alt: SIA429DJT-T1-GE3) |
Asia - 0 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# SIA429DJT-T1-GE3 Vishay Intertechnologies |
Trans MOSFET P-CH 20V 10.6A 6-Pin PowerPAK SC-70 T/R (Alt: SIA429DJT-T1-GE3) |
Europe - 12000 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 Vishay Siliconix |
MOSFET P-CH 20V 12A SC-70 |
3000 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 Vishay Intertechnologies |
P-Channel 20V 12A 1V @ 250uA 20.5mohms @ 6A,4.5V 3.5W PowerPAK SC-70-6 MOSFET RoHS |
182 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# SIA429DJT-T1-GE3CT-ND Vishay Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
7337 In Stock |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 Vishay Intertechnologies |
In stock shipping within 2days |
5084 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 Vishay Intertechnologies |
RoHS: Compliant
pbFree: Yes
|
0 Reel |
Part Number | Description | Stock |
SIA429DJTT1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
10710 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
4824 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# XSKDRABV0058754 Vishay Intertechnologies |
6000 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# 04X9735 Vishay Intertechnologies |
MOSFET, P CHANNEL, -20V, POWERPAK SC70-6, Transistor Polarity:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:12A, On Resistance Rds(on):0.017ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 3000
Container: Cut Tape
|
0 |
SIA429DJT-T1-GE3. D# 28AC2096 Vishay Intertechnologies |
MOSFET, P-CH, -20V, POWERPAK SC70-6, FULL REEL, Transistor Polarity:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:12A, On Resistance Rds(on):0.017ohm, Transistor Mounting:Surface Mount, Power Dissipation Pd:19WRoHS Compliant: No RoHS: Not Compliant
Min Qty: 3000
Container: TAPE & REEL - FULL
|
0 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# NS-SIA429DJT-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
3099 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# 8181450 Vishay Intertechnologies |
P-Channel MOSFET, 8.5 A, 20 V, 6-Pin PowerPAK SC-70 Vishay SIA429DJT-T1-GE3, PK Min Qty: 20
Container: Package
|
4380 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 Vishay Intertechnologies |
IN stock Immediate delivery |
4839 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 Vishay Intertechnologies |
MOSFET -20V Vds 8V Vgs Thin PowerPAK SC-70 pbFree: Pb-Free
|
Americas - 33000 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 D# 19596116 Vishay Intertechnologies |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant
|
Americas - 3000 |
Part Number | Description | Stock |
SIA429DJT-T1-GE3 Vishay Huntington |
MOSFET P-CH 20V 12A SC-70 |
14918 |
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In Stock | 8,020 - More on Order |
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Quote Limit | No Limit |
Lead-Time | Can Ship Immediately |
Minimum | 1 |
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