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| Part Number | SIHG33N65E-GE3 |
| OEMstron Part # | SIHG33N65E-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 650V 32.4A TO-247AC |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIHG33N65E-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SIHG33N65E-GE3 Specifications
| Part Number | SIHG33N65E-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 32.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 16.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 173nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4040pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 313W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247AC | |
| Package / Case | TO-247-3 |
SIHG33N65E-GE3 Documents
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| Part Number | Description | Stock |
|
SIHG33N65E-GE3 D# V36:1790_14664699 Vishay Intertechnologies |
Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
SIHG33N65E-GE3 D# SIHG33N65E-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG33N65E-GE3) RoHS: Not Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
SIHG33N65E-GE3 D# SIHG33N65E-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC (Alt: SIHG33N65E-GE3) RoHS: Compliant
|
Europe - 50 |
| Part Number | Description | Stock |
|
SIHG33N65EGE3 Vishay Intertechnologies |
Power Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC RoHS: Compliant
|
Europe - 500 |
| Part Number | Description | Stock |
|
SIHG33N65E-GE3 D# SIHG33N65E-GE3-ND Vishay Siliconix |
MOSFET N-CH 650V 32.4A TO247AC |
843 In Stock |
| Part Number | Description | Stock |
|
SIHG33N65E-GE3 D# 2576519 Vishay Intertechnologies |
MOSFET, N-CH, 650V, 32.4A, TO-247AC-3 RoHS: Compliant
Min Qty: 1
Container: Each
|
4 |
| Part Number | Description | Stock |
|
SIHG33N65E-GE3 Vishay Intertechnologies |
RoHS: Compliant
pbFree: Yes
|
0 |
| Part Number | Description | Stock |
|
SIHG33N65EGE3 VISHAY SILICONIX |
OEM/CM QUOTES ONLY | NO BROKERS |
1003 |
| Part Number | Description | Stock |
|
SIHG33N65E-GE3 D# 01AC4958 Vishay Intertechnologies |
MOSFET, N-CH, 650V, 32.4A, TO-247AC-3, Transistor Polarity:N Channel, Continuous Drain Current Id:32.4A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.09ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Bulk
|
4 |
| Part Number | Description | Stock |
|
SIHG33N65EGE3 Vishay Intertechnologies |
OEM/CM ONLY |
516 |
| Part Number | Description | Stock |
|
SIHG33N65E-GE3 D# 2576519 Vishay Intertechnologies |
MOSFET, N-CH, 650V, 32.4A, TO-247AC-3 RoHS: Compliant
Min Qty: 1
Container: Each
|
4 |
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| In Stock | 1,349 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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