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Part Number | SIHP6N65E-GE3 |
OEMstron Part # | SIHP6N65E-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 650V 7A TO220AB |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | SIHP6N65E-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 21 - Jan 26 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SIHP6N65E-GE3 Specifications
Part Number | SIHP6N65E-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 100V | |
FET Feature | - | |
Power Dissipation (Max) | 78W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220AB | |
Package / Case | TO-220-3 |
SIHP6N65E-GE3 Documents
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