For Reference Only
Part Number | SIR412DP-T1-GE3 |
OEMstron Part # | SIR412DP-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 25V 20A PPAK SO-8 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SIR412DP-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SIR412DP-T1-GE3 Specifications
Part Number | SIR412DP-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 25V | |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V | |
FET Feature | - | |
Power Dissipation (Max) | 3.9W (Ta), 15.6W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® SO-8 | |
Package / Case | PowerPAK® SO-8 |
SIR412DP-T1-GE3 Documents
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SIR412DP-T1-GE3 Vishay Siliconix |
MOSFET N-CH 25V 20A PPAK SO-8 |
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SIR412DP-T1-GE3 D# SIR412DP-T1-GE3TR-ND Vishay Siliconix |
MOSFET N-CH 25V 20A PPAK SO-8 |
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MOSFET N-CH 25V 20A PPAK SO-8 |
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