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For Reference Only
| Part Number | SIR882DP-T1-GE3 |
| OEMstron Part # | SIR882DP-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 100V 60A PPAK SO-8 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIR882DP-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SIR882DP-T1-GE3 Specifications
| Part Number | SIR882DP-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1930pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Package / Case | PowerPAK® SO-8 |
SIR882DP-T1-GE3 Documents
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| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 D# V72:2272_09216058 Vishay Intertechnologies |
Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R |
Americas - 1570 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 D# SIR882DP-T1-GE3 Vishay Intertechnologies |
Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 Vishay Siliconix |
MOSFET,N CH,DIODE,100V,60A,PPAKSO8 |
1469 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 D# SIR882DP-T1-GE3CT-ND Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
1196 In Stock |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 D# 1859000RL Vishay Intertechnologies |
MOSFET,N CH,DIODE,100V,60A,PPAKSO8 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 Vishay Intertechnologies |
RoHS: Compliant
pbFree: Yes
|
0 Reel |
| Part Number | Description | Stock |
|
SIR882DPT1GE3 |
OEM/CM QUOTES ONLY | NO BROKERS |
5950 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 D# 78-SIR882DP-T1-GE3 Vishay Intertechnologies |
MOSFET 100 Volts 60 Amps 83 Watts RoHS: Compliant
|
13625 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 D# 94T2661 Vishay Intertechnologies |
MOSFET, N CH, 100V, 60A, POWERPAK SO-8, Transistor Polarity:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, On Resistance Rds(on):0.0071ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 3000
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 D# NS-SIR882DP-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
21017 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 Vishay Siliconix |
POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 100V, 0.0087OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
32 |
| Part Number | Description | Stock |
|
SIR882DPT1GE3 Vishay Intertechnologies |
OEM/CM ONLY |
3108 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 Vishay Intertechnologies |
MOSFET 100 Volts 60 Amps 83 Watts pbFree: Pb-Free
|
Americas - 9000 |
| Part Number | Description | Stock |
|
SIR882DP-T1-GE3 D# 45527400 Vishay Intertechnologies |
Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R |
Americas - 1570 |
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| Quote Limit | No Limit |
| Lead-Time | Can Ship Immediately |
| Minimum | 1 |
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