For Reference Only
Part Number | SIS430DN-T1-GE3 |
OEMstron Part # | SIS430DN-T1-GE3 |
Manufacturer | Vishay Siliconix |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 25V 35A PPAK 1212-8 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | SIS430DN-T1-GE3 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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SIS430DN-T1-GE3 Specifications
Part Number | SIS430DN-T1-GE3 | |
Brand | Vishay Siliconix | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 25V | |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 5.1mOhm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 12.5V | |
FET Feature | - | |
Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® 1212-8 | |
Package / Case | PowerPAK® 1212-8 |
SIS430DN-T1-GE3 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
SIS430DN-T1-GE3 D# 70616571 Vishay Siliconix |
SIS430DN-T1-GE3 N-channel MOSFET Transistor, 21 A, 25 V, 8-Pin PowePAK 1212 RoHS: Not Compliant
|
0 |
Part Number | Description | Stock |
SIS430DN-T1-GE3 Vishay Intertechnologies |
1899 |
Part Number | Description | Stock |
SIS430DN-T1-GE3 Vishay Siliconix |
MOSFET N-CH 25V 35A PPAK 1212-8 |
Contact Us |
Part Number | Description | Stock |
SIS430DNT1GE3 Vishay Intertechnologies |
Power Field-Effect Transistor, 21.5A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant
|
Europe - 3000 |
Part Number | Description | Stock |
SIS430DN-T1-GE3 D# SIS430DN-T1-GE3TR-ND Vishay Siliconix |
MOSFET N-CH 25V 35A PPAK 1212-8 |
Limited Supply - Call |
Part Number | Description | Stock |
SIS430DN-T1-GE3 Vishay Intertechnologies |
In stock shipping within 2days |
2940 |
Part Number | Description | Stock |
SIS430DNT1GE3 Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
42915 |
Part Number | Description | Stock |
SIS430DN-T1-GE3 Vishay Intertechnologies |
OEM/CM Immediate delivery |
2940 |
Part Number | Description | Stock |
SIS430DN-T1-GE3 D# NS-SIS430DN-T1-GE3 Vishay Siliconix |
OEM/CM ONLY |
9283 |
Part Number | Description | Stock |
SIS430DN-T1-GE3 D# 8141308 Vishay Intertechnologies |
N-Channel MOSFET, 21 A, 25 V, 8-Pin PowePAK 1212 Vishay SIS430DN-T1-GE3, TA Min Qty: 10
Container: Ammo Pack
|
3803 |
Part Number | Description | Stock |
SIS430DNT1GE3 Vishay Siliconix |
OEM/CM ONLY |
39079 |
Part Number | Description | Stock |
SIS430DN-T1-GE3 Vishay Intertechnologies |
IN stock Immediate delivery |
2955 |
Part Number | Description | Stock |
SIS430DN-T1-GE3 NCTNUVOTON |
shipping today |
468 |
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