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SISS61DN-T1-GE3

SISS61DN-T1-GE3
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For Reference Only

Part Number SISS61DN-T1-GE3
OEMstron Part # SISS61DN-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 20V PPAK 1212-8S
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SISS61DN-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SISS61DN-T1-GE3 Specifications

Part Number SISS61DN-T1-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET® Gen III
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 30.9A (Ta), 111.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 231nC @ 10V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 8740pF @ 10V
FET Feature -
Power Dissipation (Max) 5W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S

SISS61DN-T1-GE3 Documents

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